Chaoyang Tan, Shiqi Yin, Jiawang Chen, Yuan Lu, Wensen Wei, Haifeng Du, Kailang Liu, Fakun Wang, Tianyou Zhai, Liang Li. Hexagonal WSe2 Nanoplates for Large-Scale Continuous Optoelectronic Films. Xiaoyu Zhao, Runqiu Wang, Shuai Guo, Dieter Weller, Sufeng Quan, Jing Yu, Jie Jiang, Yingying Wang. Substrate Lattice-Guided MoS2 Crystal Growth: Implications for van der Waals Epitaxy. Yung-Yu Lai, Chi-Huang Chuang, Yen-Wei Yeh, Cheng-Hung Hou, Shih-Chieh Hsu, Yi Chou, Yi-Chia Chou, Hao-Chung Kuo, YewChung Sermon Wu, Yuh-Jen Cheng. 
Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis.
Leining Zhang, Jichen Dong, Feng Ding. Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics. Yuanyuan Shi, Benjamin Groven, Jill Serron, Xiangyu Wu, Ankit Nalin Mehta, Albert Minj, Stefanie Sergeant, Han Han, Inge Asselberghs, Dennis Lin, Steven Brems, Cedric Huyghebaert, Pierre Morin, Iuliana Radu, Matty Caymax. 
The Journal of Physical Chemistry C 2021, 125 Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy. Markeev, Emad Najafidehaghani, Ziyang Gan, Kai Sotthewes, Antony George, Andrey Turchanin, Michel P. Versatile Logic and Nonvolatile Memory Based on a van der Waals Heterojunction.
Yibo Sun, Shuiyuan Wang, Senfeng Zeng, Xiaohe Huang, Peng Zhou. One-Step Synthesis of NbSe2/Nb-Doped-WSe2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact. Van Tu Vu, Thi Thanh Huong Vu, Thanh Luan Phan, Won Tae Kang, Young Rae Kim, Minh Dao Tran, Huong Thi Thanh Nguyen, Young Hee Lee, Woo Jong Yu. Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices. Hao Ou, Hirofumi Matsuoka, Juliette Tempia, Tomoyuki Yamada, Togo Takahashi, Koshi Oi, Yuhei Takaguchi, Takahiko Endo, Yasumitsu Miyata, Chang-Hsiao Chen, Lain-Jong Li, Jiang Pu, Taishi Takenobu. This article is cited by 667 publications. The resistor-loaded inverter based on a WSe 2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The top-gated field-effect transistors based on WSe 2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm 2/Vs, respectively. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO 3, where large-size WSe 2 monolayer flakes or thin films can be successfully grown. However, the growth of a transition metal selenide monolayer has still been a challenge. 
Recent reports have demonstrated the growth of large-size two-dimensional MoS 2 layers by the sulfurization of molybdenum oxides. The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices.
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